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Composite Transistors
XN08081 (XN8081)
Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr)
For analog switching I Features
* Two elements incorporated into one package (J-FET + Tr) * Reduction of the mounting area and assembly cost by one half * Low-frequency and low-noise J-FET
4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
3
2
1
(0.65)
I Basic Part Number of Element
* 2SK1103 + UNR1213 (UN1213)
0.30+0.10 -0.05 0.50+0.10 -0.05 10
1.1+0.2 -0.1
I Absolute Maximum Ratings Ta = 25C
Parameter FET Gate to drain voltage Drain current Gate current Tr Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg Rating -50 20 10 50 50 100 300 150 -55 to +150 Unit V mA mA V V mA mW C C
1: Gate 2: Base 3: Emitter EIAJ: SC-74
0 to 0.1
Marking Symbol: 9Z Internal Connection
4 Tr
R2 47 k R1 47 k
5
3
2
Note) The part number in the parenthesis shows conventional part number.
Publication date: September 2001 SJJ00244AED
1.1+0.3 -0.1
4: Collector 5: Source 6: Drain Mini6-G1 Package
6
FET
1
0.40.2
5
1
XN08081
I Electrical characteristics Ta = 25C 3C
* FET
Parameter Gate to drain voltage Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain on resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 1.5 pF Crss VDS = 10 V, VGS = 0, f = 1 MHz 1.5 pF Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Conditions IG = -10 A, VDS = 0 VDS = 10 V, VGS = 0 VGS = -30 V, VDS = 0 VDS = 10 V, ID = 10 A VDS = 10 V, ID = 1 mA, f = 1 kHz VDS = 10 mV, VGS = 0 VDS = 10 V, VGS = 0, f = 1 MHz 1.8 2.5 400 7 Min -50 0.2 2.2 -10 -1.0 Typ Max Unit V mA nA V mS pF
* Tr
Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Transition frequency IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10 V, IE = -1 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k -30% 0.8 47 1.0 150 4.9 0.2 +30% 1.2 80 0.25 Min 50 50 0.1 0.5 0.1 Typ Max Unit V V A A mA V V V k MHz
Common characteristics chart PT T a
350 300 250 200 150 100 50 0
Total power dissipation PT (mW)
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (C)
2
SJJ00244AED
XN08081
Characteristics charts of FET ID VDS
1.6 1.4 1.2 - 0.1 V 1.0 0.8 0.6 0.4 0.2 0 0 - 0.2 V - 0.3 V - 0.4 V Ta = 25C VGS = 0 V
ID VGS
1.8 1.6 1.4
5
Yfs VGS
Forward transfer admittance Yfs (mS)
VDS = 10 V
VDS = 10 V Ta = 25C
4
Drain current ID (mA)
Drain current ID (mA)
1.2 1.0 0.8 0.6 0.4 0.2 Ta = -25C 25C
3
2
1
75C 0
1
2
3
4
5
6
7
8
9 10
0 -1.2
-1.0 - 0.8 - 0.6 - 0.4 - 0.2
0 -1.6 -1.4 -1.2 -1.0 - 0.8 - 0.6- 0.4 - 0.2 0
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
Yfs VGS
5
Forward transfer admittance Yfs (mS)
4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0
VDS = 10 V Ta = 25C
0.5
1
1.5
2
2.5
3
3.5
4
Drain current ID (mA)
Characteristics charts of Tr IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
140 120 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA
VCE(sat) IC
10 IC / IB = 10 320 280 VCE = 10 V
hFE IC
Forward current transfer ratio hFE
Ta = 75C 25C
Collector current IC (mA)
100 80 60 40
240 200 160 120 80 40 0 0.1 - 25C
1
0.2 mA
0.1
Ta = 75C -25C 25C
0.1 mA 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12
0.01 0.01
0.1
1
10
100
1
10
100
1 000
Collector to emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (mA)
SJJ00244AED
3
XN08081
IO VIN
1 000 VO = 5 V Ta = 25C 100
VIN IO
VO = 0.2 V Ta = 25C
Cob VCB
10
100
10
10
1
1
0.1
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
Output current IO (mA)
Input voltage VIN (V)
0.01
0
2
4
6
8
10
12
0.1 0.1
1
1 10 100
0
5
10
15
20
25
30
35
Input voltage VIN (V)
Output current IO (mA)
Collector to base voltage VCB (V)
4
SJJ00244AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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